ImprovedElectrical Performances of An InP/ InGaAs Heterojunction Bipolar Transistor

Performance of InP/InGaAs Heterojunction Bipolar Transistors For 40Gb/s OEIC Applications

A high performance InP/InGaAs SHBT technology will be presented. InP SHBT is advantageous in terms of low-cost monolithic integration with photodiodes for high-speed optical receiver frontend applications. We will demonstrate that, through optimized CAD geometries, the fabricated HBTs showed uniform and improved device performance. Our best results show that an fT of over 160 GHz and fmax of gr...

Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor

The electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor (DHBT) are investigated. The study is based on energy balance (EB) transport model and TCAD SILVACO device simulator. InP/In0.24Ga0.76As0.73Sb0.27 DHBT have a low Emitter-Base conduction band discontinuity EC and a minimum base bandgap energy EG among the entire composition ran...

Characteristics of InP/InGaAs based Heterojunction Phototransistor for Optoelectronic Mixer

Characteristics of InP/InGaAs based Heterojunction Phototransistor for Optoelectronic Mixer By Seung-Chan Han School of Electrical and Electronic Engineering College of Engineering Yonsei University Wireless communication is becoming an crucial area of today’s life. With chasing this trend, there are continuously growing demands for ultra-wideband transmission due to insufficiency of available ...

Investigation of InAs/InGaAs/InP Heterojunction Tunneling Field-Effect Transistors

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (Ioff) and small subthreshold swing (S). However, low on-current (Ion) of silicon-based TFETs has been pointed out as a drawback. To improve Ion of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction...

Surface passivation and aging of InGaAs/InP heterojunction phototransistors